1n/fdll 914/a/b / 916/a/b / 4148 / 4448 1n/fdll 914/a/b / 916/a/b / 4148 / 4448 small signal diode absolute maximum ratings* t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 200 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics ? 2002 fairchild semiconductor corporation symbol parameter value units v rrm maximum repetitive reverse voltage 100 v i f(av) average rectified forward current 200 ma i fsm non-repetitive peak forward surge current pulse width = 1.0 second pulse width = 1.0 microsecond 1.0 4.0 a a t stg storage temperature range -65 to +200 c t j operating junction temperature 175 c symbol characteristic max units 1n/fdll 914/a/b / 4148 / 4448 p d power dissipation 500 mw r ja thermal resistance, junction to ambient 300 c/w 1n/fdll 914/a/b / 916/a/b / 4148 / 4448, rev. b
1n/fdll 914/a/b / 916/a/b / 4148 / 4448 typical characteristics small signal diode (continued) symbol parameter test conditions min max units v r breakdown voltage i r = 100 a i r = 5.0 a 100 75 v v v f forward voltage 1n914b/4448 1n916b 1n914/916/4148 1n914a/916a 1n916b 1n914b/4448 i f = 5.0 ma i f = 5.0 ma i f = 10 ma i f = 20 ma i f = 20 ma i f = 100 ma 620 630 720 730 1.0 1.0 1.0 1.0 mv mv v v v v i r reverse current v r = 20 v v r = 20 v, t a = 150 c v r = 75 v 25 50 5.0 na a a c t total capacitance 1n916a/b/4448 1n914a/b/4148 v r = 0, f = 1.0 mhz v r = 0, f = 1.0 mhz 2.0 4.0 pf pf t rr reverse recovery time i f = 10 ma, v r = 6.0 v (60ma), i rr = 1.0 ma, r l = 100 ? 4.0 ns electrical characteristics t a = 25c unless otherwise noted 110 120 130 140 150 160 ta=25 o c 1 2 3 5 10 20 30 50 100 reverse voltage, v r [v] reverse current, i r [ua] figure 1. reverse voltage vs reverse current bv - 1.0 to 100 ua 0 20 40 60 80 100 120 10 20 30 50 70 100 ta= 25 o c reverse current, i r [na] reverse voltage, v r [v] figure 2. reverse current vs reverse voltage ir - 10 to 100 v general rule: the reverse current of a diode will approximately double for every ten (10) degree c increase in temperature 250 300 350 400 450 500 550 1 2 3 5 10 20 30 50 100 ta= 25 o c forward voltage, v r [mv] forward current, i f [ua] figure 3. forward voltage vs forward current vf - 1 to 100 ua 450 500 550 600 650 700 750 0.1 0.2 0.3 0.5 1 2 3 5 10 ta= 25 o c forward voltage, v f [mv] forward current, i f [ma] figure 4. forward voltage vs forward current vf - 0.1 to 10 ma
1n/fdll 914/a/b / 916/a/b / 4148 / 4448 typical characteristics (continued) small signal diode (continued) 0 50 100 150 0 100 200 300 400 500 i f(av) - average rectified current - ma current (ma) ambient temperature ( o c) 02468101214 0.75 0.80 0.85 0.90 t a = 25 o c total capacitance (pf) reverse voltage (v) 0.6 0.8 1.0 1.2 1.4 1.6 10 20 30 50 100 200 300 500 800 ta= 25 o c forward voltage, v f [mv] forward current, i f [ma] figure 5. forward voltage vs forward current vf - 10 to 800 ma 0.01 0.1 1 10 300 400 500 600 700 800 900 3 0.3 0.03 typical ta= -40 o c ta= 25 o c ta= +65 o c forward voltage, v f [mv] forward current, i f [ma] figure 6. forward voltage vs ambient temperature vf - 0.01 - 20 ma (-40 to +65 deg c) 10 20 30 40 50 60 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ta = 25 o c reverse recovery time, t rr [ns] reverse recovery current, i rr [ma] figure 8. reverse recovery time vs reverse recovery current 0 50 100 150 200 0 100 200 300 400 500 do-35 sot-23 power dissipation, p d [mw] temperature [ o c] figure 10. power derating curve figure 7. total capacitance if = 10ma - irr = 1.0 ma - rloop = 100 ohms figure 9. average rectified current (i f(av) ) versus ambient temperature (t a )
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